ACADEMICS
Course Details
ELE 214 Electronics Laboratory I
2020-2021 Spring term information
The course is open this term
Supervisor(s): | Dr. Dinçer Gökcen Dr. Gürhan Bulu | |
Assistant(s): | Kübra Saka Alp Demirel İbrahim Bozyel Dr. Sevda Özdemir | |
Place | Day | Hours |
---|---|---|
- |
Timing data are obtained using weekly schedule program tables. To make sure whether the course is cancelled or time-shifted for a specific week one should consult the supervisor and/or follow the announcements.
Course definition tables are extracted from the ECTS Course Catalog web site of Hacettepe University (http://akts.hacettepe.edu.tr) in real-time and displayed here. Please check the appropriate page on the original site against any technical problems. Course data last updated on 20/04/2021.
ELE214 - ELECTRONICS LABORATORY I
Course Name | Code | Semester | Theory (hours/week) |
Application (hours/week) |
Credit | ECTS |
---|---|---|---|---|---|---|
ELECTRONICS LABORATORY I | ELE214 | 4th Semester | 0 | 3 | 1 | 2 |
Prerequisite(s) | ||||||
Course language | English | |||||
Course type | Must | |||||
Mode of Delivery | Face-to-Face | |||||
Learning and teaching strategies | Preparing and/or Presenting Reports Experiment Project Design/Management Other: This course must be taken together with ELE230 ELECTRONICS I. | |||||
Instructor (s) | Faculty members | |||||
Course objective | It is aimed to give the following topics to the students; a) SPICE simulation language and simulation with SPICE tools b) Analysis and design of voltage rectifier and voltage regulator circuits c) DC and AC analysis of BJT and FET amplifier circuits d) Frequency response of BJT and FET amplifier circuits e) Design of BJT and FET amplifiers | |||||
Learning outcomes |
| |||||
Course Content | Introduction to SPICE, Semiconductor diodes and rectifier circuits, Zener diodes and their regulator applications, Characteristics of bipolar junction transistors, Characteristics of field effect transistors, AC/DC analysis BJT and FET amplifiers, Frequency response of BJT and FET amplifiers. | |||||
References | 1. A. S. Sedra and K. C. Smith, Microelectronic Circuits, Oxford Uni. Press, 2009 (6th ed.) 2. R. L. Boylestad and L. Nashelsky, Electronic Devices and Circuit Theory, Pearson, 2012, (11th ed.) 3. J. Millman and C. Halkias, Integrated Electronics, McGraw-Hill 4. D. Neamen, Electronic Circuit Analysis and Design, McGraw-Hill |
Course outline weekly
Weeks | Topics |
---|---|
Week 1 | |
Week 2 | Introduction to SPICE |
Week 3 | Experiment 1: Semiconductor diodes and rectifier circuits |
Week 4 | |
Week 5 | Experiment 2: Zener diodes and their regulator applications |
Week 6 | Assignment of projects for group study |
Week 7 | Experiment 3: Characteristics of bipolar junction transistors |
Week 8 | |
Week 9 | Experiment 4: AC/DC analysis of BJT amplifiers |
Week 10 | |
Week 11 | Experiment 5: Characteristics of junction field effect transistors |
Week 12 | |
Week 13 | Experiment 6: AC/DC analysis and frequency response of JFET amplifiers |
Week 14 | Experiment 7: Frequency response of BJT amplifiers |
Week 15 | Preparation for Final exam |
Week 16 | Final Exam |
Assesment methods
Course activities | Number | Percentage |
---|---|---|
Attendance | 0 | 0 |
Laboratory | 8 | 40 |
Application | 0 | 0 |
Field activities | 0 | 0 |
Specific practical training | 0 | 0 |
Assignments | 0 | 0 |
Presentation | 0 | 0 |
Project | 1 | 20 |
Seminar | 0 | 0 |
Midterms | 0 | 0 |
Final exam | 1 | 40 |
Total | 100 | |
Percentage of semester activities contributing grade succes | 8 | 60 |
Percentage of final exam contributing grade succes | 1 | 40 |
Total | 100 |
Workload and ECTS calculation
Activities | Number | Duration (hour) | Total Work Load |
---|---|---|---|
Course Duration (x14) | 0 | 0 | 0 |
Laboratory | 8 | 3 | 24 |
Application | 0 | 0 | 0 |
Specific practical training | 0 | 0 | 0 |
Field activities | 0 | 0 | 0 |
Study Hours Out of Class (Preliminary work, reinforcement, ect) | 8 | 3 | 24 |
Presentation / Seminar Preparation | 0 | 0 | 0 |
Project | 0 | 0 | 0 |
Homework assignment | 0 | 0 | 0 |
Midterms (Study duration) | 0 | 0 | 0 |
Final Exam (Study duration) | 1 | 12 | 12 |
Total Workload | 17 | 18 | 60 |
Matrix Of The Course Learning Outcomes Versus Program Outcomes
D.9. Key Learning Outcomes | Contrubition level* | ||||
---|---|---|---|---|---|
1 | 2 | 3 | 4 | 5 | |
1. PO1. Possesses the theoretical and practical knowledge required in Electrical and Electronics Engineering discipline. | X | ||||
2. PO2. Utilizes his/her theoretical and practical knowledge in the fields of mathematics, science and electrical and electronics engineering towards finding engineering solutions. | X | ||||
3. PO3. Determines and defines a problem in electrical and electronics engineering, then models and solves it by applying the appropriate analytical or numerical methods. | X | ||||
4. PO4. Designs a system under realistic constraints using modern methods and tools. | X | ||||
5. PO5. Designs and performs an experiment, analyzes and interprets the results. | X | ||||
6. PO6. Possesses the necessary qualifications to carry out interdisciplinary work either individually or as a team member. | X | ||||
7. PO7. Accesses information, performs literature search, uses databases and other knowledge sources, follows developments in science and technology. | X | ||||
8. PO8. Performs project planning and time management, plans his/her career development. | X | ||||
9. PO9. Possesses an advanced level of expertise in computer hardware and software, is proficient in using information and communication technologies. | X | ||||
10. PO10. Is competent in oral or written communication; has advanced command of English. | X | ||||
11. PO11. Has an awareness of his/her professional, ethical and social responsibilities. | X | ||||
12. PO12. Has an awareness of the universal impacts and social consequences of engineering solutions and applications; is well-informed about modern-day problems. | X | ||||
13. PO13. Is innovative and inquisitive; has a high level of professional self-esteem. | X |
*1 Lowest, 2 Low, 3 Average, 4 High, 5 Highest